The modulation Stark spectroscopy method is applied to study the main characteristics of holes burnt by a hscr in inhomogeneously broadened absorption spectra of octaethylchlorin in thin polymer films at 4.2 K The method used is charactcriscd by high scnsitivity,it allows us to detect holes with dep
Hole burning in the absorption spectrum of chlorin in polymer films: stark effect and temperature dependence
โ Scribed by Fritz A. Burkhalter; Georg W. Suter; Urs P. Wild; Vladimir D. Samoilenko; Nataliya V. Rasumova; Roman I. Personov
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 461 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
Oprical hole-burning experiments at 2 K with chlorin in polymethylmerhacryiare (PhIMA), polystyrene (PST) and polyvinyibutanal (PVB) gave hole widths of 1.2, 1.6 and 0.75 GIlz. Prclitninar_v temperaturedependent measurements in PVB susest that the linewidth xt 0 K approsimates the lifetime-limited value_ Due to the Stark erfect on thr randoml>* distributed molecules, a si:nificsnt reversible broadening was observed when an electric field of 6000 V/cm was applied to the ample.
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The electric field effect of spectral holes, in the S, +So absorption band of octaethylporphyrin (OEP), is studied in matrices with different dielectric constants, t. The analysis of the hole-contours shows that the Stark effect is linear and provides an average matrix-induced dipole moment, A&,,, w
A relationship is obtained between the homogeneous absorption spectrum ofan impurity centre and the hole shape burnt during the strongly inhomogeneously broadened optical transitions of impurities in solids. Model calculations show a strong dependence of the hole shape on the laser frequency and bur
St ~rl, rxprrmlrnts rlrc reporwd on the Si -So O-O transitions of chlonn (7.8-dihydroporphin) and its photorsomer m dilrfcrLn1 utrc tn u-iwune .md aoct.me single cry\t.ds b) photochemical hole-burnmgat 1 2 I<. For chlorin fifi=+O.23 I) \\a111 +kja(So) I or Uie photoproduct we esrmwe JI(SI) = 2 2 D