Holding time degradation in dynamic MOS RAM by injection-induced electron currents

✍ Scribed by Eitan, B.; Frohman-Bentchkowsky, D.; Shappir, J.

• Book ID: 114593978
• Publisher: IEEE
• Year: 1981
• Tongue: English
• Weight: 494 KB
• Volume: 28
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1981.20639