𝔖 Bobbio Scriptorium
✦   LIBER   ✦

History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

✍ Scribed by Nakamura, Shuji; Krames, M. R.

Book ID
120969349
Publisher
IEEE
Year
2013
Tongue
English
Weight
963 KB
Volume
101
Category
Article
ISSN
0018-9219

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Gallium nitride based micro-cavity light
Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm
✍ Pattison, P. Morgan ;Sharma, Rajat ;David, Aurelian ;Waki, Ichitaro ;Weisbuch, C 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 184 KB

## Abstract A gallium nitride based micro‐cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift‐off process. Cavity thinning was carried o

Wet etching of non-polar gallium nitride
Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction
✍ Hong-Yeol Kim; Younghun Jung; Sung Hyun Kim; Jaehui Ahn; Michael A. Mastro; Jenn 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 639 KB

The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refract