𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High‐temperature contact structures for silicon semiconductor devices

✍ Scribed by Wittmer, Marc

Book ID
115469353
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
461 KB
Volume
37
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low resistivity ohmic contacts on 4H-sil
Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications
✍ S.-K Lee; C.-M Zetterling; M Östling; J.-P Palmquist; U Jansson 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 233 KB

We investigated titanium based ohmic contacts using co-evaporated epitaxial titanium carbide (TiC) on highly 1 1 doped n -and p -type epilayers as well as Al ion implanted layers for high power and high temperature device application. Epitaxially grown TiC ohmic contacts on epilayers as well as Al i