Highly strained InxGa1−xPGaP quantum wells grown on GaP and on an Inx2Ga1−x2P buffer layer by gas-source molecular beam epitaxy

✍ Scribed by W.G. Bi; C.W. Tu

• Book ID: 111708746
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 306 KB
• Volume: 165
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(96)00185-6