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Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy

✍ Scribed by R.R. LaPierre; T. Okada; B.J. Robinson; D.A. Thompson; G.C. Weatherly


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
851 KB
Volume
158
Category
Article
ISSN
0022-0248

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