In this work, the nanocrystalline porous silicon (PS) is prepared through the simple electrochemical etching of n-type Si (1 0 0) under the illumination of a 100 W incandescent white light. SEM, AFM, Raman and PL have been used to characterize the morphological and optical properties of the PS. SEM
β¦ LIBER β¦
Highly sensitive photodetector using porous silicon
β Scribed by Zheng, J. P.; Jiao, K. L.; Shen, W. P.; Anderson, W. A.; Kwok, H. S.
- Book ID
- 120809164
- Publisher
- American Institute of Physics
- Year
- 1992
- Tongue
- English
- Weight
- 516 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.107884
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