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Photodetectors from Porous Silicon

✍ Scribed by Rossi, A. M. ;Bohn, H. G.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
104 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A metal–semiconductor–metal photoconductive detector has been fabricated from porous silicon. To that aim low conductive p‐type Si (20 Ω cm) has been porosified and several rapid‐thermal treatment steps applied before deposition of Al‐contacts. The photo response was investigated in the wavelength range of 350–800 nm. A responsivity of up to 4 A/W was observed at 600 nm which is about 13 times higher than that of a commercial photodiode. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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