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Highly p-doped epitaxial graphene obtained by fluorine intercalation

โœ Scribed by Walter, Andrew L.; Jeon, Ki-Joon; Bostwick, Aaron; Speck, Florian; Ostler, Markus; Seyller, Thomas; Moreschini, Luca; Kim, Yong Su; Chang, Young Jun; Horn, Karsten; Rotenberg, Eli

Book ID
120073211
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
539 KB
Volume
98
Category
Article
ISSN
0003-6951

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โœ Riedl, C. (author);Coletti, C. (author);Iwasaki, T. (author);Zakharov, A. A. (au ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› The American Physical Society ๐ŸŒ English โš– 897 KB

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the รฐ6 ffiffiffi 3 p ร‚ 6 ffiffiffi 3 p รžR30 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this b