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High yield in wafer bonding with surface structured wafers

✍ Scribed by W. Kissinger; G. Kissinger; J. Krüger; H. Hofmann


Book ID
119124517
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
336 KB
Volume
12
Category
Article
ISSN
0167-577X

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## Abstract The evolution of the interfaces of hydrophilic‐bonded Si wafers and the corresponding low‐angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001