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High-voltage planar p-n junctions

✍ Scribed by Kao, Y.C.; Wolley, E.D.

Book ID: 115472415
Publisher: IEEE
Year: 1967
Tongue: English
Weight: 484 KB
Volume: 55
Category: Article
ISSN: 0018-9219
DOI: 10.1109/proc.1967.5842

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MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown volt