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High-voltage, double-gate devices on silicon-on-insulator

✍ Scribed by René P Zingg

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 688 KB
Volume: 59
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(01)00644-x

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✦ Synopsis

This paper reviews several silicon-on-insulator power technologies, and compares them to those of bulk silicon and wide band-gap material. The concept of double-gate for thin-film SOI power devices is brought into historical context. Several criteria for the proper choice of technology are discussed, and typical applications presented. Some aspects on the implementation of novel technology are reviewed, and an outlook on discrete power semiconductors and power integrated circuits given.

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