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High-voltage (3.3 kV) 4H-SiC JBS diodes

✍ Scribed by P. A. Ivanov; I. V. Grekhov; N. D. Il’inskaya; O. I. Kon’kov; A. S. Potapov; T. P. Samsonova; O. U. Serebrennikova

No coin nor oath required. For personal study only.

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Leakage currents in 4H-SiC JBS diodes

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; O. I. Kon’kov; N. D. Il’inskaya; T. 📂 Article 📅 2012 🏛 Springer 🌐 English ⚖ 301 KB

Experimental 4H-SiC junction-barrier Sch

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; N. D. Il’inskaya; T. P. Samsonova; O 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 259 KB

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Excess leakage currents in high-voltage

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