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High-vacuum electron-beam co-evaporation of Si nanocrystals embedded in Al2O3 matrix

✍ Scribed by Q Wan; N.L Zhang; X.Y Xie; T.H Wang; C.L Lin

Book ID
108417733
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
156 KB
Volume
191
Category
Article
ISSN
0169-4332

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In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing