## Abstract Raman scattering of Lβasparagine:Cr^3+^ was studied over the complete range of wavenumbers at temperatures from ambient to βΌ410 K. A qualitative change in the spectrum occurs when the temperature approaches 400 K. In the region of the spectrum corresponding to lattice vibrations of the
High temperature Raman spectroscopy studies of carbon nanowalls
β Scribed by Z. H. Ni; H. M. Fan; X. F. Fan; H. M. Wang; Z. Zheng; Y. P. Feng; Y. H. Wu; Z. X. Shen
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 386 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0377-0486
- DOI
- 10.1002/jrs.1793
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β¦ Synopsis
Abstract
High temperature Raman experiments were carried out on carbon nanowalls (CNWs). The intensity of the defectβinduced D mode decreased significantly after the sample was heated in air ambient. The Raman intensity ratio of D mode and G mode, I~D~/I~G~, changed from 2.3 at room temperature to 1.95 after the sample was heated to 600 Β°C. This change was attributed to the removal of surface amorphous carbon by oxidation. In contrast to I~D~/I~G~, the intensity ratio of the Dβ² mode and the G mode, I~Dβ²~/I~G~, did not change much after heating, indicating that the surface amorphous carbon and surface impurity do not contribute as much to the intensity of the Dβ² mode. The dominant contributor to the Dβ² mode could be the intrinsic defects. Copyright Β© 2007 John Wiley & Sons, Ltd.
π SIMILAR VOLUMES
Zn 1-x Fe x Se, x = 0, 0.018, 0.035 and 0.16, were studied by Raman scattering spectroscopy up to 35.0 GPa. It was found that the semiconductor-metal phase transition pressures for these samples are 14.4, 12.8, 12.0 and 10.9 GPa, respectively. Before the semiconductor-metal phase transition, a visib