High Temperature Oxide (HTO) for non volatile memories applications
β Scribed by Ph. Candelier; B. Guillaumot; F. Mondon; G. Reimbold; H. Achard; F. Martin
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 282 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency over conventional channel hot electron programming. We show how this superior performance can be traded to achieve either low voltage-low power or high-speed operation. The cell concept is valida
Over the past decade, organic electronics have been investigated due to their various merits, such as low cost, flexibility, easy fabrication, and printing capability. [1][2][3][4][5] Many researchers have reported high-performance organic light-emitting diodes (OLEDs), organic thin-film transistors