High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure

✍ Scribed by VanMil, B. L.; Guo, Huicheng; Holbert, L. J.; Lee, Kyoungnae; Myers, T. H.; Liu, Ting; Korakakis, D.

• Book ID: 121844223
• Publisher: AVS (American Vacuum Society)
• Year: 2004
• Tongue: English
• Weight: 427 KB
• Volume: 22
• Category: Article
• ISSN: 0734-211X
• DOI: 10.1116/1.1768531