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High temperature limitations for GaN growth by RF-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, and excess Ga-overpressure

✍ Scribed by B. L. VanMil; Huicheng Guo; L. J. Holbert; Kyoungnae Lee; C. H. Swartz; Ting Liu; D. Korakakis; T. H. Myers


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
107 KB
Volume
2
Category
Article
ISSN
1862-6351

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