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High-temperature kinetics of some Si- and Cl-containing ceramic precursors

✍ Scribed by A. Kunz; P. Roth


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
332 KB
Volume
33
Category
Article
ISSN
0538-8066

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✦ Synopsis


Abstract

This article summarizes our recent experimental investigations of high‐temperature kinetics of Si‐ and Cl‐containing precursor molecules relevant to chemical vapor synthesis and ceramic processing. Reaction systems using SiCl~4~ and SiHCl~3~ highly diluted in argon, which were studied in a shock tube using the combination of thermal pyrolysis and laser flash photolysis methods, are described. In situ concentrations of the atomic species Si, Cl, and H were measured simultaneously using the atomic resonance absorption spectroscopy. The measured properties were sensitive to a limited number of elementary reactions, which could be analyzed in terms of rate coefficients. Β© 2001 John Wiley & Sons, Inc. Int J Chem Kinet 33: 741–754, 2001


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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense