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High-temperature kinetics of Si-containing precursors for ceramic processing

✍ Scribed by D. Woiki; L. Catoire; P. Roth


Publisher
American Institute of Chemical Engineers
Year
1997
Tongue
English
Weight
719 KB
Volume
43
Category
Article
ISSN
0001-1541

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## Abstract This article summarizes our recent experimental investigations of high‐temperature kinetics of Si‐ and Cl‐containing precursor molecules relevant to chemical vapor synthesis and ceramic processing. Reaction systems using SiCl~4~ and SiHCl~3~ highly diluted in argon, which were studied i