High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes

✍ Scribed by Shiojima, Kenji; Wakayama, Hisashi; Aoki, Toshichika; Kaneda, Naoki; Nomoto, Kazuki; Mishima, Tomoyoshi

• Book ID: 122247545
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 1021 KB
• Volume: 557
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2013.11.031