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High temperature core-level photoemission study of Si(111)

✍ Scribed by S. Vandré; A. Santoni; A. Goldoni; V.R. Dhanak; M. Sancrotti


Book ID
117217083
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
548 KB
Volume
377-379
Category
Article
ISSN
0039-6028

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Core-level photoemission spectra of the As 3d, Ga 3d and Bi 5d core levels were recorded for the Bi GaAs Ž . Ž . 111 A-2 = 2 surface. From the early stages of Bi growth, there are two distinct chemical environments for Bi. Surface Bi is bonded to both As and Ga atoms. The deposition of approximately