High-temperature anomalies in resistivity and thermoelectric power of thick-film resistors and their conduction mechanism

✍ Scribed by Abdurakhmanov, G. (author);Abdurakhmanova, N. G. (author)

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 91 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200420036

✦ Synopsis

Abstract

Resistivity ρ and thermoelectric power S of RuO~2~‐based thick‐film resistors were measured in tempera‐ ture range T = 77–1100 K. Sharp maxima of ρ and S occur at 1000 K. ρ = 7.5 × 10^3^ Ω cm and S = +90 μV/K at the maxima, while ρ = 2.5 × 10^3^ Ω cm and S = +10 μV/K at room temperature. Thermoelectric power becomes negative at temperatures in the range 700–800 K and 1000–1070 K. It is assumed that the peculiarities of ρ and S are caused by structural changes in compounds of the lead‐silicate glass used in the thick‐film resistors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)