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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

✍ Scribed by J. Zavadil; K. Žďánský; L. Pekárek; O. Procházková; P. Kacerovský

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
111 KB
Volume
0
Category
Article
ISSN
1862-6351

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A a