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High-temperature annealing of bulk GaN layers

✍ Scribed by V. N. Bessolov; Yu. V. Zhilyaev; M. E. Kompan; E. V. Konenkova; S. A. Kukushkin; M. V. Mesh; S. D. Raevskii; A. L. Fradkov; V. A. Fedirko


Book ID
110133294
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
103 KB
Volume
28
Category
Article
ISSN
1063-7850

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TEM investigation of Tm implanted GaN, t
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In this work we carry out characterization of GaN implanted with Tm ions by transmission electron microscopy. We have investigated samples implanted at room temperature with different energies (150-300 keV) and fluences (1 β€’ 10 14 -4.9 β€’ 10 15 Tm/cm 2 ). High temperature annealing was performed at 1