High temperature (74°C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

40-mW 100°C maximum temperature operatio

40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

✍ Shimada, N.; Horiuchi, O.; Gen-ei, K.; Tanaka, A.; Okada, M.; Watanabe, M.; Itoh 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 167 KB

[IEEE Conference Digest. ISLC 1998 NARA.

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - 40 mW, 100°C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes

✍ Shimada, N.; Horiuchi, O.; Gen-Ei, K.; Tanaka, A.; Okada, M.; Watanabe, M.; Itoh 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 155 KB

progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices