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High supersaturation layer-by-layer growth: Application to Si MBE

✍ Scribed by V. Fuenzalida; I. Eisele


Book ID
107789814
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
595 KB
Volume
74
Category
Article
ISSN
0022-0248

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The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer