✦ LIBER ✦

High speed switch using pairs of pHEMTs with shifted gates

✍ Scribed by S. Mil'shtein; C. Liessner

Book ID: 104050967
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 113 KB
Volume: 36
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2005.02.052

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✦ Synopsis

In many radio frequency (RF) applications, small, high-power, high-speed switches are vital. Currently, pHEMTs are considered among the fastest of the semiconductor devices, capable of operating up to 100 GHz. We designed a switch topology using simple series and shunt elements. Each element was comprised of a single, unbiased pHEMT. We found shifting the position of the gate asymmetrically towards the source terminal in these transistors improved the switching time. Using very long HEMTs in our experimental chips we observed improvement of turn-on and turn-off time (both in single nanoseconds) as well as better linearity and power handling.

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