High Speed Heterostructure Devices

✍ Scribed by Richard A. Kiehl and T.C.L. Gerhard Sollner (Eds.)

• Publisher: Academic Press
• Year: 1994
• Tongue: English
• Leaves: 481
• Series: Semiconductors and Semimetals 41
• Category: Library

✦ Synopsis

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.
Key Features
* The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed
* Offers a complete, three-chapter review of resonant tunneling
* Provides an emphasis on circuits as well as devices

✦ Table of Contents

Content:
Edited by
Page iii

Copyright page
Page iv

List of Contributors
Page ix

Preface
Pages xi-xii
Richard A. Kiehl, T.C.L. Gerhard Sollner

Chapter 1 Quantum Electron Devices: Physics and Applications Original Research Article
Pages 1-77
Federico Capasso, Fabio Beltram, S. Sen, A. Palevski, A.Y. Cho

Chapter 2 GaAS-Gate Semiconductor–Insulator–Semiconductor FET Original Research Article
Pages 79-156
Paul Solomon, David J. Frank, Steven L. Wright, Frank Canora

Chapter 3 Unipolar InP-Based Transistors Original Research Article
Pages 157-217
Majid M. Hashemi, Umesh K. Mishra

Chapter 4 Complementary Heterostructure FET Integrated Circuits Original Research Article
Pages 219-290
Richard A. Kiehl

Chapter 5 GaAs-Based and InP-Based Heterostructure Bipolar Transistors Original Research Article
Pages 291-358
Tadao Ishibashi

Chapter 6 High-Frequency Resonant-Tunneling Devices Original Research Article
Pages 359-419
H.C. Liu, T.C.L.G. Sollner

Chapter 7 Resonant-Tunneling Hot-Electron Transistors and Circuits Original Research Article
Pages 421-447
H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, N. Yokoyama

Index
Pages 449-454