Very High Speed Integrated Circuits: Heterostructure

✍ Scribed by Toshiaki Ikoma (Eds.)

• Publisher: Academic Press
• Year: 1990
• Tongue: English
• Leaves: 293
• Series: Semiconductors and Semimetals 30
• Category: Library

✦ Table of Contents

Content:
Semiconductors and Semimetals
Page ii

Edited by
Page iii

Copyright page
Page iv

List of Contributors
Page vii

Preface
Pages ix-x
Toshiaki Ikoma

Chapter 1 Fundamentals of Epitaxial Growth and Atomic Layer Epitaxy Original Research Article
Pages 1-52
Hisatsune Watanabe, Takashi Mizutani, Akira Usui

Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE Original Research Article
Pages 53-104
S. Hiyamizu

Chapter 3 Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers Original Research Article
Pages 105-155
T. Nakanisi

Chapter 4 High Electron Mobility Transistor and LSI Applications Original Research Article
Pages 157-193
T. Mimura

Chapter 5 Hetero-Bipolar Transistor and Its LSI Application Original Research Article
Pages 195-229
Takayuki Sugeta, Tadao Ishibashi

Chapter 6 Optoelectronic Integrated Circuits Original Research Article
Pages 231-284
Hideaki Matsueda, Toshiki P. Tanaka, Michiharu Nakamura

Index
Pages 285-290