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High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

✍ Scribed by Kishino, K.; Kikuchi, A.; Yoshizawa, M.; Fujita, N.; Kushi, K.; Sasamoto, H.

Book ID: 117866182
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 189 KB
Volume: 4
Category: Article
ISSN: 1077-260X
DOI: 10.1109/2944.704116

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