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High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

โœ Scribed by Kashio, N.; Kurishima, K.; Fukai, Y.K.; Ida, M.; Yamahata, S.


Book ID
114619897
Publisher
IEEE
Year
2010
Tongue
English
Weight
356 KB
Volume
57
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


Emitter-metal-related degradation in InP
โœ Yoshino K. Fukai; Kenji Kurishima; Norihide Kashio; Minoru Ida; Shoji Yamahata; ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 769 KB

We investigated the reliability of InP-based HBTs with a ledge structure, focusing on emitter-metal-diffusion-induced degradation. Bias-temperature accelerated tests under high temperatures and high current densities of up to 5 mA/lm 2 were conducted for HBTs with conventional emitter electrodes, wh