High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

✍ Scribed by Streit, D.C.; Oki, A.K.; Umemoto, D.K.; Velebir, J.R.; Stolt, K.S.; Yamada, F.M.; Saito, Y.; Hafizi, M.E.; Bui, S.; Tran, L.T.

• Book ID: 120641205
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 256 KB
• Volume: 12
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.116921