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Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

✍ Scribed by Jourdan, N.; Alexandre, F.; Dubon-Chevallier, C.; Dangla, J.; Gao, Y.

Book ID: 114534542
Publisher: IEEE
Year: 1992
Tongue: English
Weight: 443 KB
Volume: 39
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.127463

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