✦ LIBER ✦

High-sensitivity SIMS analysis of carbon in GaN films by molecular ion detection

✍ Scribed by Takakuwa-Hongo, C.; Tomita, M.

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 299 KB
Volume: 25
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199712)25:13<966::aid-sia324>3.0.co;2-v

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✦ Synopsis

The improvement of the detection sensitivity of carbon in GaN thin Ðlms was investigated. Using the molecular ion CN-in SIMS, the secondary ion yields were increased greatly, and the detection limit was improved by more than two orders of magnitude. The reason for this is that the molecule CN has a high electron affinity of 3.82 eV and can easily be ionized to the CN-ion. The use of this molecular ion was also useful for other nitride Ðlms, such as These results suggest that the radicals having high electron affinity can be applied widely to the analysis of Si 3 N 4 . small amounts of impurities. 1997

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