## Abstract The cover picture of the present issue of physica status solidi (a) is a temperature map of a AlGaN/GaN heterostructure field effect transistor (HFET) obtained using microβRaman spectroscopy. The inset shows a photograph of the device with source (S), gate (G) and drain (D) positions ma
β¦ LIBER β¦
High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices
β Scribed by Sarua, A.; Bullen, A.; Haynes, M..; Kuball, M..
- Book ID
- 114618837
- Publisher
- IEEE
- Year
- 2007
- Tongue
- English
- Weight
- 551 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0018-9383
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