High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters)

✍ Scribed by Kuball, M. ;Pomeroy, J. W. ;Rajasingam, S. ;Sarua, A. ;Uren, M. J. ;Martin, T. ;Lell, A. ;Härle, V.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 193 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200590008

✦ Synopsis

Abstract

The cover picture of the present issue of physica status solidi (a) is a temperature map of a AlGaN/GaN heterostructure field effect transistor (HFET) obtained using micro‐Raman spectroscopy. The inset shows a photograph of the device with source (S), gate (G) and drain (D) positions marked. The paper by M. Kuball et al. [1] is an invited presentation from the International Workshop on Nitride Semiconductors (IWN 2004).

In the Rapid Research Letter by B. Lamprecht et al. [2] the authors report on the successful fabrication and characterization of working organic photodiodes deposited on ordinary newspaper sheets as an example for a flexible and very rough substrate with unfortunate mechanical properties.