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High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

✍ Scribed by L.G. Gosset; J.-J. Ganem; I. Trimaille; S. Rigo; F. Rochet; G. Dufour; F. Jolly; F.C. Stedile; I.J.R. Baumvol

Book ID: 114169663
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 624 KB
Volume: 136-138
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(97)00731-3

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## Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub‐nanometer resolution and high strain sensitivity that the thin Si cap