A diode-pumped Nd : YVO4 laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the in uence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse proΓΏle, pulse energy
High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser
β Scribed by Jie Liu; Jimin Yang; Jingliang He
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 188 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0030-3992
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β¦ Synopsis
We demonstrated an e cient and compact, diode-pumped passively Q-switched Nd:YVO4 laser operation at 1:064 m wavelength with high repetition rate, using Cr 4+ :YAG as saturable absorber, formed with a simple at-at resonator. The maximum CW output power of 4:05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1:4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr 4+ :YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 J and the highest peak power of 3 kW were obtained when the Cr 4+ :YAG crystal with an initial transmission of 60% was used.
π SIMILAR VOLUMES
A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
An efficient compact self-Raman frequency conversion in an end-diode-pumped actively Q-switched c-cut Nd:YVO 4 laser has been demonstrated. At an incident pump power of 5.0 W, the self-stimulated Raman laser produces 910 mW of 1178 nm average output power at a pulse repetition frequency of 20 kHz. D