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High quantum efficiency of intersubband transitions in coherent tunneling of electrons through asymmetric double-barrier structures

โœ Scribed by E. I. Golant; A. B. Pashkovskii


Book ID
110145267
Publisher
Springer
Year
1997
Tongue
English
Weight
115 KB
Volume
85
Category
Article
ISSN
1063-7761

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By applying pulsed high magnetic fields up to 40 T, we studied magneto-tunneling properties in AIGaAs/GaAs/AIGaAs double-barrier resonant-tunneling devices in a quantum-limit regime. A distinct resonance of tunneling current and a hysteresis of current vs voltage curves which originate from the disc