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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

✍ Scribed by Nishizawa, Shinichi; Kato, Tomohisa; Kitou, Yasuo; Oyanagi, Naoki; Hirose, Fusao; Yamaguchi, Hirotaka; Bahng, Wook; Arai, Kazuo


Book ID
121010910
Publisher
Trans Tech Publications, Ltd.
Year
2004
Tongue
English
Weight
914 KB
Volume
457-460
Category
Article
ISSN
1662-9752

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## Abstract Aluminium nitride (AlN) bulk single crystals were grown on off‐oriented 4H‐SiC substrates by the sublimation method. High‐quality crystals with about 25 mm in diameter and up to 5 mm in thickness were obtained with an optimized growth process. The crystals show hexagonal symmetry with w

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