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High-quality fully relaxed In[sub 0.65]Ga[sub 0.35]As layers grown on InP using the paramorphic approach

✍ Scribed by Damlencourt, J. F.; Leclercq, J. L.; Gendry, M.; Regreny, P.; Hollinger, G.

Book ID: 120997571
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 464 KB
Volume: 75
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.125413

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