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High-quality dielectric suitable for use with amorphous semiconductors

✍ Scribed by Haden, C.R.; Barrett, J.L.; Stone, J.L.


Book ID
119797314
Publisher
IEEE
Year
1974
Tongue
English
Weight
837 KB
Volume
9
Category
Article
ISSN
0018-9200

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High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu