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High pressure vapour phase epitaxy of GaN

✍ Scribed by K. Gillessen; K.-H. Schuller; B. Struck


Book ID
113185159
Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
310 KB
Volume
12
Category
Article
ISSN
0025-5408

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The Growth of GaN Using Plasma Assisted
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Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed