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High pressure vapor growth of GaN

✍ Scribed by J. Karpiński; S. Porowski; S. Miotkowska


Book ID
107789340
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
618 KB
Volume
56
Category
Article
ISSN
0022-0248

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Atmospheric pressure growth of Eu-doped
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## Abstract We investigated the luminescence properties of the Eu‐doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN:Eu (AP‐GaN:Eu) is lower than that of low pressure GaN:E