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High-Pressure Synthesis of Amorphous MgNi 1.02 H 2.2

✍ Scribed by Chen, Jun; Sakai, Tetsuo; Kitamura, Naoyuki; Takeshita, Hiroyuki T.; Kuriyama, Nobuhiro


Book ID
121462342
Publisher
American Chemical Society
Year
2001
Tongue
English
Weight
97 KB
Volume
123
Category
Article
ISSN
0002-7863

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w