Using time-resolved (TRPL) and continuous-wave photoluminescence (CWPL) we have studied GaAs/partially ordered Ga 0.5 In 0.5 P single quantum well samples at pressures up to 5 GPa. In such samples emission from the quantum well is only seen if intermediate GaP layers are grown between the GaAs and G
High pressure photoluminescence and resonant Raman study of GaAs
β Scribed by Peter Y. Yu; Benjamin Welber
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 224 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to %5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well,
## Abstract Raman and photoluminescence of CdS nanowires of diameter 80 nm and lengths up to several tens of micrometers were studied at pressure up to 60 kbar using a JobinβYvon T64000 microβRaman system in conjunction with the diamondβanvil cell technique. The phase transition pressure of wurtzit
In the present paper we study the effect of high hydrostatic pressure (up to 16 GPa) on the Raman spectrum of Lu 3 Al 5 O 12 single crystals. Lu 3 Al 5 O 12 belongs to the crystal family of rare earth garnets (Re 3 Al 2 (AlO 4 ) 3 , Re: Gd, Tb, Dy, Er, . . .). These materials crystallize with the bo