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X-Ray, Raman and Photoluminescence Study of Vacancy Ordered β-Ga2Se3 under High Pressure

✍ Scribed by M. Takumi; Y. Koshio; K. Nagata


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
203 KB
Volume
211
Category
Article
ISSN
0370-1972

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We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to %5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well,