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High-pressure phase transformations in MnAl2S4 and MnGa2S4

✍ Scribed by Mitsuru Yokota; Yasuhiko Syono; Shigeru Minomura

Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
401 KB
Volume
3
Category
Article
ISSN
0022-4596

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Structure of IIIa-ZnIn2S4 under High Pre
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The only member of the IIΒ±III 2 Β±VI 4 semiconductor family with layered structure is ZnIn 2 S 4 . At ambient conditions several polytypes of this compound have been reported. Energy dispersive X-ray diffraction of ZnIn 2 S 4 has been realized at high pressure up to 18 GPa. The structure of this poly