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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

โœ Scribed by Ueda, K.; Kasu, M.; Makimoto, T.


Book ID
111965146
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
324 KB
Volume
90
Category
Article
ISSN
0003-6951

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